a******e
发帖数: 80 | 1 以前看到过，但现在只记得电路，不记得出处了，哪位大虾提示一下
其实就3个transistor，其中一个diode-connected，另外两个来bias主transistor的
body voltage，这样来确保body voltage总是source和drain中最低的。
图片在
谢谢 |
w7
发帖数: 76 | 2 The body voltage is not necessarily equal to the lowest of source/drain
voltage. Furthermore the nmosfet located in p-well is not very common in
most ASIC process. It seems that this ckt is originally from a patent.
Do you do power management ic design? |
a******e
发帖数: 80 | 3 Thanks for your input.
I am working on fail-safe ICs. But you are right, this circuit was
originally used for charge pump circuits. The circuit requires a twin-well
or triple-well technology or even a silicon-on-insulator process to
implement.
Anybody saw this circuit in a paper or a patent? I just need to have a
reference for this circuit. It does not matter who proposed this circuit in
the first instance.
Cheers. |
s**g
发帖数: 66 | 4 比起这个稍微复杂一点。主要是比较两个输入电压，选择其中较低的输出，供给其他Ｎ
ＭＯＳ的ＰＴＵＢ偏置。它是负电荷泵的ＰＴＵＢ偏置的启动电路。
我有参考过公司内部的一个ＤＩＳＣＬＯＳＵＲＥ，但是好象他们并没有申请专利。
建议你翻翻ＦＥＮＧ ＰＡＮ 和ＴＡＰＡＮ ＳＡＭＡＤＤＡＲ
ＣＨＡＲＧＥ ＰＵＭＰ ＣＩＲＣＵＩＴ ＤＥＳＩＧＮ
１８９页和它的参考资料。 |
s****2
发帖数: 921 | 5 好像charge pump里面有类似东西
in
【在 a******e 的大作中提到】
: Thanks for your input.
: I am working on fail-safe ICs. But you are right, this circuit was
: originally used for charge pump circuits. The circuit requires a twin-well
: or triple-well technology or even a silicon-on-insulator process to
: implement.
: Anybody saw this circuit in a paper or a patent? I just need to have a
: reference for this circuit. It does not matter who proposed this circuit in
: the first instance.
: Cheers.
|
s****2
发帖数: 921 | 6 IEEE JSSC Vol. 35 no.8 ,aug. 2000
a new charge pump without degradation in threshold voltage due to body
effect
【在 s**g 的大作中提到】
: 比起这个稍微复杂一点。主要是比较两个输入电压，选择其中较低的输出，供给其他Ｎ
: ＭＯＳ的ＰＴＵＢ偏置。它是负电荷泵的ＰＴＵＢ偏置的启动电路。
: 我有参考过公司内部的一个ＤＩＳＣＬＯＳＵＲＥ，但是好象他们并没有申请专利。
: 建议你翻翻ＦＥＮＧ ＰＡＮ 和ＴＡＰＡＮ ＳＡＭＡＤＤＡＲ
: ＣＨＡＲＧＥ ＰＵＭＰ ＣＩＲＣＵＩＴ ＤＥＳＩＧＮ
: １８９页和它的参考资料。
|
