c****g
发帖数: 18 | 1 Title: Fabrication of Integrated Field-Effect Transistors and Detecting
System Based on CVD Grown Graphene
ABSTRACT:
An integrated field-effect transistors based on large-area multilayer
graphene produced by chemical vapor deposition was fabricated in this work.
A planar Au sheet was used as gate electrode integrated with graphene FET to
obtain perpendicular electrical field between gate and graphene substrate.
Graphene film was transferred to cover indium tin oxides films which were
used as drain and source electrodes. By this method, the contact resistance
between graphene and electrodes which caused by PMMA residues in chemical
vapor deposition process was almost eliminated. An electrical detecting
system was designed to detect equivalent resistance of the FETs, which
indicated that the performance of the FETs was associated with the width of
conducting channel, the electrical field intensity between gate and graphene
, and the ion concentration of electrolyte. ATP was selected as electrolyte
in this paper. The integrated FET could achieve high sensitivity to detect
ATP as low as 10 pM and the equivalent resistance of the FET showed a good
correlation with ATP concentration from 10 pM to 10 M. These results may
provide better understanding and useful information for the design of
integrated graphene FETs biosensors.
Send me your contact information and research interests. |
s*****n
发帖数: 23 | 2 Thanks for sharing! I have sent you my bio.
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resistance
【在 c****g 的大作中提到】
: Title: Fabrication of Integrated Field-Effect Transistors and Detecting
: System Based on CVD Grown Graphene
: ABSTRACT:
: An integrated field-effect transistors based on large-area multilayer
: graphene produced by chemical vapor deposition was fabricated in this work.
: A planar Au sheet was used as gate electrode integrated with graphene FET to
: obtain perpendicular electrical field between gate and graphene substrate.
: Graphene film was transferred to cover indium tin oxides films which were
: used as drain and source electrodes. By this method, the contact resistance
: between graphene and electrodes which caused by PMMA residues in chemical
|
k****o
发帖数: 728 | 3 建议不要放这么多具体信息在网上。毕竟这是没发表的工作。即使以后发表了，人家一
搜title或者abstract内容，direct到这里来，一看帖子标题“Review opportunity (
journal name...)，就算不认识中文的也能猜出大概。问到editor那里，杂志以后就会
在邀请review方面更谨慎了。对后面的xdjm很不利。
.
to
.
resistance
【在 c****g 的大作中提到】
: Title: Fabrication of Integrated Field-Effect Transistors and Detecting
: System Based on CVD Grown Graphene
: ABSTRACT:
: An integrated field-effect transistors based on large-area multilayer
: graphene produced by chemical vapor deposition was fabricated in this work.
: A planar Au sheet was used as gate electrode integrated with graphene FET to
: obtain perpendicular electrical field between gate and graphene substrate.
: Graphene film was transferred to cover indium tin oxides films which were
: used as drain and source electrodes. By this method, the contact resistance
: between graphene and electrodes which caused by PMMA residues in chemical
|
c****g
发帖数: 18 | 4 说的很有道理，谢谢你的意见，下次我会注意的。
【在 k****o 的大作中提到】
: 建议不要放这么多具体信息在网上。毕竟这是没发表的工作。即使以后发表了，人家一
: 搜title或者abstract内容，direct到这里来，一看帖子标题“Review opportunity (
: journal name...)，就算不认识中文的也能猜出大概。问到editor那里，杂志以后就会
: 在邀请review方面更谨慎了。对后面的xdjm很不利。
:
: .
: to
: .
: resistance
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