h***i
发帖数: 634 | 1 不是很了解电子束光刻
哪里可以查得到精度相关的参数啊
误差都由于什么原因啊
有什么前沿介绍性的文章吗
谢谢了 |
m*******e
发帖数: 639 | 2 Sorry that I can't input Chinese at work.
Electron beam widths can get down to a few nm, while the resolution is
generally determined by the forward scattering in the photoresist.
If you are really interested in this topic, you can do a brief "google"
research on "e-beam" and "ion beam" lithography.
【在 h***i 的大作中提到】
: 不是很了解电子束光刻
: 哪里可以查得到精度相关的参数啊
: 误差都由于什么原因啊
: 有什么前沿介绍性的文章吗
: 谢谢了
|
e******g
发帖数: 461 | 3 对准精度要看谁做了，好的一般都可以在100nm以下
【在 h***i 的大作中提到】
: 不是很了解电子束光刻
: 哪里可以查得到精度相关的参数啊
: 误差都由于什么原因啊
: 有什么前沿介绍性的文章吗
: 谢谢了
|
g***i
发帖数: 795 | 4 I remember the alignment is determined by your e-beam system's laser
interferometer system's accuracy and your calibration. e-beam litho resolution is
determined by how well you focus the beam(a bit similar as how you focus your SEM), photoresist(type, thickness and bake condition）, beam dose/energy, type of electron emission gun and focus system. The detailed operation procedure is varied from different vendors. |
c**s
发帖数: 80 | |
h***i
发帖数: 634 | 6 Thank you all
Are these two the alignment accuracy?
Overlay: ± 25nm mean plus 3σ
Stitching: ± 25nm mean plus 3σ
Any paper published for the state-of-the-art system? |
F********g
发帖数: 475 | 7 One good journal to look at is JVSTb (Journal of Vacuum Science and
Technology B)
last year's issue on EIPBN
http://scitation.aip.org/dbt/dbt.jsp?KEY=JVTBD9&Volume=CURVOL&Issue=CURISS |
h***i
发帖数: 634 | 8 Very informative
Thanks a lot |
