a*******i
发帖数: 11664 | 1 最近开始用polystyrene nanosphere pattern Si substrate，没有任何经验，有几个
问题：
1. 用RIE etch Si，没太大问题，就是nanosphere消耗的很快，尤其是小size的
nanosphere，很快就打没了。除了用
SiNx, SiO2做一层mask还有别的方法么？polystyrene nanosphere如果加热能变硬么？
2. 有没有可行的wet etching方法？spin之后放到热碱里面很快就没了。
多谢 | d***a
发帖数: 128 | 2 1. SiO2 pattern as mask ok, even with large SiO2 sphere as mask, at 90C, PS
sphere will be soft, >100C, deform spherical shape
2, try to use tobulene, maybe working, | P********n
发帖数: 372 | | a*******i
发帖数: 11664 | | m*******e
发帖数: 119 | 5 Post your RIE recipt here. I guess you used oxygen in your recipe. Remove it
. | c***y
发帖数: 233 | 6 if I want to burn Polystyrene? what is the temperature to do that? 150C ok?
thanks
PS
【在 d***a 的大作中提到】
: 1. SiO2 pattern as mask ok, even with large SiO2 sphere as mask, at 90C, PS
: sphere will be soft, >100C, deform spherical shape
: 2, try to use tobulene, maybe working,
| P********n
发帖数: 372 | 7 可能不够。 PS的熔点是166C。分解温度290C。所以至少290C才行。如果PS是交联过的
，那需要的温度就更高了。
ok?
【在 c***y 的大作中提到】
: if I want to burn Polystyrene? what is the temperature to do that? 150C ok?
: thanks
:
: PS
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